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MIT Lincoln Laboratory Technical Staff in Lexington, Massachusetts

We work at the convergence of materials science and micro- and nanoscale engineering to develop microsystems with novel functionality. We develop materials, microfabrication processes, and multifunctional microsystems, with the aim to leverage properties at the small scale in everything we do. Our activities range from forming metamaterials and phase-change materials, to integrating optoelectronic devices in unusual form factors such as fibers and fabrics, to developing microfluidic devices based on electrowetting, to creating new materials and new processes for 3D printing. Our application space is equally broad: it encompasses low-cost picosatellites fabricated in a silicon foundry, advanced fibers that can sense and communicate and be woven into clothing, energy-efficient microhydraulic actuators for micro-robotics, optofluidics for enhanced eyewear, and energy storage and energy harvesting components. Our high-impact work is enabled by the Microelectronics Laboratory, the Defense Fabric Discovery Center, and other cleanroom facilities at the Laboratory.

Job Description

The group is seeking a CMOS device development engineer to develop specialized silicon CMOS and beyond-CMOS technologies. This individual will be expected to contribute both subject matter expertise and technical leadership, and will work with a team of process engineers to establish future generations of Lincoln Laboratory special-purpose device technologies. The successful candidate will have a thorough understanding of the CMOS process flow, and demonstrated depth of knowledge and experience with semiconductor device physics, TCAD modeling and semiconductor device design. CMOS background should include familiarity with technology nodes at or below 65 nm, and preferably also including nanometer-scale technologies. He or she should have a demonstrated ability to plan rigorous TCAD and physical experiments, and to respond to rapidly-shifting priorities. Effective communication with technical staff and technicians within and outside their field of specialty is required.

Requirements: Ph.D. in Electrical Engineering, Materials Science, Chemical Engineering, Physics or related field or a M.S. with at least 5 years hands-on experience in semiconductor device and/or process development. Familiarity with CMOS technology at or below the 65-nm node as well as beyond-CMOS technologies is essential. Experience with CMOS device development for production use is preferred. Must have excellent written and verbal communication skills. Experience should include statistical design of experiments, transistor design, TCAD, and analysis of test data. The successful candidate will have an awareness of the relevant state of the art device technologies in terms of silicon processing steps, process integration, scaling principles and drivers of technology design rules and performance targets

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Selected candidate will be subject to a pre-employment background investigation and must be able to obtain and maintain a Secret level DoD security clearance.

MIT Lincoln Laboratory is an Equal Employment Opportunity (EEO) employer. All qualified applicants will receive consideration for employment and will not be discriminated against on the basis of race, color, religion, sex, sexual orientation, gender identity, national origin, age, veteran status, disability status, or genetic information; U.S. citizenship is required.

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